Semiconductor package cooled by grounded cooler

ABSTRACT

A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

CROSS REFERENCE TO RELATED APPLICATION

This application is based on and claims priority to Japanese PatentApplication No. 2010-149673 filed on Jun. 30, 2010 and No. 2011-83473filed on Apr. 5, 2011, the contents of which are incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device including asemiconductor package encapsulating a semiconductor element and a metalmember for heat radiation of the semiconductor element, and a cooler forcooling a radiation surface of the metal plate.

BACKGROUND OF THE INVENTION

A semiconductor device including a semiconductor package and a coolerfor cooling the semiconductor package has been proposed. Thesemiconductor package includes a semiconductor element and a metalmember. The semiconductor element and the metal member are covered witha molding member to form the semiconductor package. A mounting surfaceof the metal member is connected to the semiconductor element so thatheat of the semiconductor element can be transmitted to the metalmember. A radiation surface of the metal member is exposed outside themolding member.

The cooler is attached to the semiconductor package in such a mannerthat the radiation surface of the metal member is in contact with thecooler through an electrically insulating grease. Thus, the heat of thesemiconductor package is released to the cooler.

The cooler is typically made of metal. Therefore, as disclosed in, forexample, JP-A-2008-166333 or US 2004/0089928 corresponding toJP-3740116, the radiation surface of the metal member is covered with anelectrically insulating layer to prevent a short-circuit between themetal member and the cooler. Further, the insulating later is coveredwith an electrically conducting layer for protecting the insulatinglayer. The conducting layer of the metal member is in contact with thecooler through the grease.

That is, the metal member has a multilayer structure including a metalportion, an electrically insulating layer on the metal portion, and anelectrically conducting layer on the insulating layer. The conductinglayer serves as the radiation surface of the metal member.

The present inventors have found out that such a semiconductor devicehas the following disadvantages. The disadvantages are discussed belowwith reference to FIGS. 15 and 16.

FIG. 15 is a cross-sectional view of a first conventional semiconductordevice, and a FIG. 16 is a cross-sectional view of a second conventionalsemiconductor device.

Firstly, the second conventional semiconductor device shown in FIG. 16is discussed. In the second conventional semiconductor device, a heatradiation plate 31 is mounted on a cooler 200 through a grease 300having a heat conductivity. An electrically insulating substrate 33 ismounded on the radiation plate 31 through a solder 32. A semiconductorelement 10 is mounted on the insulating substrate 33 through the solder32.

The radiation plate 31 is fixed to the cooler 200 by a bolt 34 thatreaches the radiation plate 31 by penetrating the radiation plate 31 andthe grease 300.

Thus, the radiation plate 31 is pressed by the bolt 34 against thecooler 200 by a pressure necessary to allow the heat to be transmittedfrom the radiation plate 31 to the cooler 200.

In this case, since the insulating substrate 33 is located directlyunder the semiconductor element 10, heat of the semiconductor element 10is transmitted to the insulating substrate J3 at a high heat flux. As aresult, an increase in temperature of the insulating substrate J3 islarge.

Secondly, the first conventional semiconductor device shown in FIG. 15is discussed.

The first conventional semiconductor device includes a semiconductorpackage 100 having a semiconductor element 10 and a metal member 20. Thesemiconductor element 10 and the metal member 10 are covered with amolding member 60 to form the semiconductor package 100. A mountingsurface of the metal member 20 is connected to the semiconductor element10. A radiation surface of the metal member 20 is exposed outside themolding member 60. The metal member includes a metal portion 21, anelectrically insulating layer 22 on the metal portion 21, and anelectrically conducting layer 23 on the insulating layer 22. Theconducting layer 23 serves as the radiation surface of the metal member20.

The first conventional semiconductor device further includes a cooler200 having a coolant passage 201 through which a coolant 202 circulates.The conducting layer 23 of the semiconductor package 100 is in contactwith the cooler 200 through an electrically insulating grease 300. Thus,the heat of the semiconductor package 100 is absorbed by the coolant 202of the cooler 200 so that the conducting layer 23 can be cooled by thecoolant 202.

That is, in the first conventional semiconductor device, thesemiconductor element 10 is located through the metal portion 21 on theinsulating layer 22. Thus, heat of the semiconductor element 10 isradiated to the metal portion 21 and thus transmitted to the insulatinglayer 22 at a low heat flux. Therefore, the first conventionalsemiconductor device can have a high heat radiation performance comparedto the second conventional semiconductor device. Accordingly, the firstconventional semiconductor device can be reduced in size.

By the way, in the first conventional semiconductor device, when avoltage V0 caused by a switching operation of the semiconductor element10 is applied to a mounding surface (i.e., metal portion 21) of themetal member 20, a voltage V2 is applied to the radiation surface (i.e.,conducting layer 23) of the metal member 20.

Specifically, the voltage V2 is given by the following equation:V2={C1/(C1+C2)}·V0

In the above equation, C1 represents a capacitance of a parasiticcapacitor formed between the metal portion 21 and the conducting layer23 through the insulating layer 22. C2 represents a capacitance of aparasitic capacitor formed between the cooler 200 and the conductinglayer 23 through the grease 300. When the voltage V2 is applied to theconducting layer 23, noise radiation or partial discharge from theconducting layer 23 may occur. Such noise radiation may damage thegrease 300, for example.

The application of voltage V2 to the conducting layer 23 can beprevented by electrically connecting the conducting layer 23 to thecooler 200 through the grease 300. However, since the grease 300 has anelectrically insulating property, it is difficult to ensure electricalconnection between the conducting layer 23 and the cooler 200. Further,it is difficult to check the electrical connection between theconducting layer 23 and the cooler 200.

SUMMARY OF THE INVENTION

In view of the above, it is an object of the present invention toprovide a semiconductor device including a semiconductor package and acooler having the same potential as a radiation surface of thesemiconductor package.

According to an aspect of the present invention, a semiconductor deviceincludes a package and a cooler. The semiconductor package includes asemiconductor element, a metal member, and a molding member forencapsulating the semiconductor element and the metal member. The metalmember has a metal portion thermally connected to the semiconductorelement, an electrically insulating layer on the metal portion, and anelectrically conducting layer on the insulating layer. The conductinglayer is at least partially exposed outside the molding member andserves as a radiation surface for radiating heat of the semiconductorelement. The cooler has a coolant passage through which a coolantcirculates to cool the conducting layer. The conducting layer and thecooler are electrically connected together.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features, and advantages will become moreapparent from the following description and drawings in which likereference numerals depict like elements. In the drawings:

FIG. 1A is diagram illustrating a cross-sectional view of asemiconductor device according to a first embodiment of the presentinvention, and FIG. 1B is an enlarged view of a circle IB in FIG. 1A;

FIG. 2 is a diagram illustrating a simplified top view of asemiconductor package of the semiconductor device of FIG. 1A;

FIG. 3A is a diagram illustrating a cross-sectional view of asemiconductor device according to a second embodiment of the presentinvention, and FIG. 3B is an enlarged view of a circle IIIB in FIG. 3A;

FIG. 4 is a diagram illustrating a partial cross-sectional view of asemiconductor device according to a first modification of the secondembodiment;

FIG. 5 is a diagram illustrating a partial cross-sectional view of asemiconductor device according to a second modification of the secondembodiment;

FIG. 6 is a diagram illustrating a partial cross-sectional view of asemiconductor device according to a third embodiment of the presentinvention;

FIG. 7 is a diagram illustrating a partial cross-sectional view of asemiconductor device according to a fourth embodiment of the presentinvention;

FIG. 8 is a diagram illustrating a partial cross-sectional view of asemiconductor device according to a fifth embodiment of the presentinvention;

FIG. 9A is a diagram illustrating a perspective view of a semiconductordevice according to a sixth embodiment of the present invention, FIG. 9Bis a diagram illustrating a cross-sectional view taken along the lineIXB-IXB in FIG. 9A, and FIG. 9C is an enlarged view of a circle IXC inFIG. 9B;

FIG. 10A is a diagram illustrating an exploded view of a semiconductordevice according to a seventh embodiment of the present invention, andFIG. 10B is an assembled view of the semiconductor device of FIG. 10A;

FIG. 11A is a diagram illustrating an exploded view of a semiconductordevice according to a first modification of the seventh embodiment, andFIG. 11B is an assembled view of the semiconductor device of FIG. 11A;

FIG. 12A is a diagram illustrating an exploded view of a semiconductordevice according to a second modification of the seventh embodiment, andFIG. 12B is an assembled view of the semiconductor device of FIG. 12A;

FIG. 13A is a diagram illustrating an exploded view of a semiconductordevice according to a third modification of the seventh embodiment, andFIG. 13B is an assembled view of the semiconductor device of FIG. 13A;

FIG. 14A is a diagram illustrating an exploded view of a semiconductordevice according to a fourth modification of the seventh embodiment, andFIG. 14B is an assembled view of the semiconductor device of FIG. 14A;

FIG. 15 is a diagram illustrating a cross-sectional view of aconventional semiconductor device; and

FIG. 16 is a diagram illustrating a cross-sectional view of anotherconventional semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

A semiconductor device according to a first embodiment of the presentinvention is described below with reference to FIGS. 1A, 1B, and 2. FIG.1A is a cross-sectional view of the semiconductor device. FIG. 1B is anenlarged view of a circle IB in FIG. 1A. FIG. 2 is a simplified top viewof a semiconductor package 100 of the semiconductor device. In FIG. 2, asecond metal member 30 is omitted to show the inside of a molding member60.

The semiconductor device includes a semiconductor package 100 and acooler 200. The cooler 200 is attached to the semiconductor package 100through a grease 300 having an electrically insulating property.

The semiconductor package 100 includes a semiconductor element 10, afirst metal member 20, a second metal member 30, a solder 40 as aconductive adhesive, a heat sink 50, and a molding member 60 as asealant. In an example shown in FIG. 1A, only one semiconductor element10 is included in the semiconductor package 100. Alternatively, two ormore semiconductor elements 10 can be included in the semiconductorpackage 100.

The solder 40 is located between the semiconductor element 10 and thefirst metal member 20 so that the semiconductor element 10 and the firstmetal member 20 can be joined together. The heat sink 50 is locatedbetween the semiconductor element 10 and the second metal member 30. Thesolder 40 is located between the semiconductor element 10 and the heatsink 50 so that the semiconductor element 10 and the heat sink 50 can bejoined together. The solder 40 is located between the second metalmember 30 and the heat sink 50 so that the second metal member 30 andthe heat sink 50 can be joined together. The heat sink 50 can be made ofmetal such as copper or aluminum.

The heat sink 50 provides space between the semiconductor element 10 andthe second metal member 30. Thus, a bonding wire (not shown) can beconnected to the semiconductor element 10. In the example shown in FIG.1A, the heat sink 50 and the second metal member 30 are separate piecesand then joined together by the solder 40. Alternatively, the heat sink50 and the second metal member 30 can be a single piece. In this case,the second metal member 30 can have a projection, instead of the heatsink 50, extending toward the semiconductor element 10.

The solder 40 can be a commonly-used solder. For example, the solder 40can be a lead-free solder such as a Sn—Pb solder or a Sn—Ag solder.

Heat of the semiconductor element 10 is radiated from front and backsurfaces of the semiconductor element 10 through the first metal member20 and the second metal member 30. That is, each of the first metalmember 20 and the second metal member 30 is thermally connected at onesurface to the semiconductor element 10 and receives the heat from thesemiconductor element 10.

Specifically, the first metal member 20 has a mounting surface and aradiation surface opposite to the mounting surface. The semiconductorelement 10 is joined through the solder 40 to the mounting surface ofthe first metal member 20. The second metal member 30 has a mountingsurface and a radiation surface opposite to the mounting surface. Theheat sink 50 is joined through the solder 40 to the mounting surface ofthe second metal member 30.

As shown in FIG. 1A, the radiation surfaces of the first and secondmetal members 20, 30 are exposed outside the molding member 60. Themolding member 60 can be made of a commonly-used molding material suchas epoxy resin. The molding member 60 can be formed by a transfermolding process, a potting process, or the like.

Specifically, as shown in FIGS. 1A, 1B and 2, space between the mountingsurfaces of the first metal member 20 and the second metal member 30 isfilled with the molding member 60 so that a side surface of thesemiconductor element 10 can be covered with the molding member 60. Asmentioned above, the radiation surfaces of the first metal member 20 andthe second metal member 30 are exposed outside the molding member 60.Thus, the semiconductor package 100 is formed by encapsulating thesemiconductor element 10 and the first and second metal members 20, 30in the molding member 60 in such a manner that the radiation surfaces ofthe first and second metal members 20, 30 are exposed outside themolding member 60.

According to the first embodiment, the first metal member 20 includes anelectrically conducting layer 23, an electrically insulating layer 22 onthe conducting layer 23, and a metal portion 21 on the insulating layer22. The conducting layer 23 defines the radiation surface of the firstmetal member 20, and the metal portion 21 defines the mounting surfaceof the first metal member 20. Likewise, the second metal member 30includes an electrically conducting layer 33, an electrically insulatinglayer 32 on the conducting layer 33, and a metal portion 31 on theinsulating layer 32. The conducting layer 33 defines the radiationsurface of the second metal member 30, and the metal portion 31 definesthe mounting surface of the second metal member 30. Each of the firstand second metal members 20, 30 has a rectangular plate shape. Theplaner size of each of the first and second metal members 20, 30 islarger than that of the semiconductor element 10.

The metal portions 21, 31 can be made of metal having good thermal andelectric conductivities. For example, the metal portions 21, 31 can bemade of aluminum, copper, or an alloy of aluminum and copper. Theinsulating layers 22, 32 can be made of alumina or the like. Forexample, the insulating layers 22, 32 can be a thermally-sprayed layeror an adhesive layer. For example, the conducting layers 23, 33 can be acopper foil.

The cooler 200 has a coolant passage 201 made of stainless, copper,aluminum, or the like. A coolant 202 circulates through the coolantpassage 201. Although not shown in the drawings, the cooler 200 hasadditional components, such as a pump and a pipe, for allowing thecoolant 202 to circulate through the coolant passage 201. The componentsare joined to the coolant passage 201 to form the cooler 200. Thecoolant 202 is a fluid such as water or oil.

The radiation surfaces, i.e., the conducting layers 23, 33 of the metalmembers 20, 30 of the semiconductor package 100 are cooled by thecoolant 202. Specifically, as shown in FIG. 1B, the conducting layers23, 33 of the metal members 20, 30 of the semiconductor package 100 arein contact with an outer surface of the cooler 200 through the grease300.

The grease 300 has both a heat conductivity and a viscosity. The grease300 can be a commonly-used grease such as silicon resin.

The semiconductor package 100 and the cooler 200 are fixed together byclamping or any other appropriate means to allow the conducting layers23, 33 to remain in contact with the outer surface of the coolantpassage 201. Thus, the conducting layers 23, 33 are cooled by thecoolant 202 of the cooler 200. That is, heat generated in thesemiconductor package 100 is absorbed the coolant 202.

The semiconductor element 10 is not limited to a particular type ofelement. For example, the semiconductor element 10 can be a power devicesuch as an insulated gate bipolar transistor (IGBT) or a thyristor. Thesemiconductor element 10 is not limited to a particular shape. Forexample, as shown in FIGS. 1A, 1B, and 2, the semiconductor element 10can have a rectangular plate shape.

A surface of the semiconductor element 10 on the second metal member30-side is defined as a front surface of the semiconductor element 10.In contrast, a surface of the semiconductor element 10 on the firstmetal member 20-side is defined as a back surface of the semiconductorelement 10. Components of the semiconductor element 10 are formed on thefront surface-side and not formed on the back surface-side of thesemiconductor element 10. Although not shown in the drawings, electrodesare formed on the front and back surfaces of the semiconductor element10 and electrically connected to the solder 40.

Thus, according to the first embodiment, the electrode on the backsurface of the semiconductor element 10 is electrically connected thoughthe solder 40 to the first metal member 20, and the electrode on thefront surface of the semiconductor element 10 is electrically connectedthough the solder 40 to the second metal member 30.

As shown in FIG. 2, the first metal member 20 has a main currentterminal 70. The main current terminal 70 extends from the inside to theoutside of the molding member 60. According to the first embodiment, themolding member 60 has a rectangular plate shape with four side surfaces,and the main current terminal 70 is exposed to one side surface of themolding member 60.

Although not shown in the drawings, the second metal member 30 has amain current terminal. The main current terminal of the second metalmember 30 extends from the inside to the outside of the molding member60 in the same manner as the main current terminal 70 of the first metalmember 20. Specifically, the main current terminal 70 of the first metalmember 20 and the main current terminal of the second metal member 30are exposed to the same side surface of the molding member 60.

The main current terminal 70 allows the semiconductor element 10 to beelectrically connected to external wiring such as busbars. Thus, thesemiconductor device can be electrically connected to external circuitrythrough the main current terminal 70.

In this way, the metal members 20, 30 can serve as not only electrodes,but also radiator plates. Specifically, the metal members 20, canradiate heat from the semiconductor element 10 and electrically connectthe semiconductor element 10 to external wiring.

The semiconductor element 10 is electrically and thermally connected tothe metal members 20, 30 through the solder 40. The solder 40 can bereplaced with an electrically conductive adhesive or the like thatallows the semiconductor element 10 to be electrically and thermallyconnected to the metal members 20, 30.

Further, according to the first embodiment, as shown in FIG. 2, thesemiconductor device has a control terminal 80. For example, the controlterminal 80 can be a lead frame arranged around the semiconductorelement 10. A first end of the control terminal 80 is covered with andfixed to the molding member 60, and a second end of the control terminal80 is exposed outside the molding member 60.

As can be seen from FIG. 2, the main current terminal 70 and the controlterminal 80 are exposed to opposing side surfaces of the molding member60. The exposed second end of the control terminal 80 is electricallyconnectable to an external control circuit so that the semiconductordevice can be electrically connected to the control circuit.

The control terminal 80 is connected to a signal electrode, such as agate electrode or an emitter electrode, on the surface of thesemiconductor element 10. For example, the control terminal 80 can be agate terminal or an emitter terminal. Although not shown in FIG. 2, thecontrol terminal 80 and the semiconductor element 10 are electricallyconnected together inside the molding member 60 by a bonding wire or thelike.

According to the first embodiment, the cooler 200 and the conductinglayer 23 of the first metal member 20 are electrically connectedtogether and thus at the same potential. This relationship is hereaftercalled that “the first metal member 20 has the same potentialstructure”. Likewise, the cooler 200 and the conducting layer 33 of thesecond metal member 30 are electrically connected together and thus atthe same potential. This relationship is hereafter called that “thesecond metal member 30 has the same potential structure”.

The same potential structure of the first metal member 20 is discussedbelow with reference mainly to FIG. 1B. Although not shown in thedrawings, the same potential structure of the second metal member 30 isformed in the same manner as the same potential structure of the firstmetal member 20.

That is, as indicated by numbers in parentheses in FIG. 1B, a portion ofthe second metal member 30 corresponding to a portion of the first metalmember 20 in a circle IB in FIG. 1A is configured in a manner as shownin FIG. 1B.

As shown in FIG. 1B, the same potential structure is formed by aterminal member 90. The terminal member 90 has an electricalconductivity. For example, the terminal member 90 can be made of copperor aluminum. A first end of the terminal member 90 is located inside themolding member 60 and electrically connected to the conducting layer 23of the first metal member 20. A second end of the terminal member 90 isexposed outside the molding member 60 and electrically connected to thecooler 200.

For example, the first end of the terminal member 90 can be electricallyconnected to the conducting layer 23 by welding, soldering, or brazing.In an example shown in FIG. 1B, the terminal member 90 and theconducting layer 23 are separate pieces and connected together.Alternatively, the terminal member 90 and the conducting layer 23 can bea single piece. In this case, the conducting layer 23 can have aprojection, instead of the terminal member 90, extending from the insideto the outside of the molding member 60.

The second end of the terminal member 90 is electrically connected tothe outer surface of the coolant passage 201 of the cooler 200 bysoldering, welding, screwing, or the like. Alternatively, the second endof the terminal member 90 can be electrically connected through a wireto the components, such as a pump and a pipe, of the cooler 200.

Thus, the conducting layer 23 and the cooler 200 are electricallyconnected through the terminal member 90. Accordingly, the conductinglayer 23 and the cooler 200 are at the same potential. For example, whenthe cooler 200 is grounded, the conducting layer 23 is grounded.

In the example shown in FIG. 1B, the terminal member 90 extends from aside surface of the conducting layer 23. The terminal member 90 canextend from any other surfaces of the conducting layer 23 except theradiation surface.

Further, as shown in FIG. 2, the terminal member 90 is exposed to a sidesurface of the molding member 60 different from the side surfaces wherethe main current terminal 70 and the control terminal 80 are exposed.

Specifically, as mentioned previously, the main current terminal 70 andthe control terminal 80 are exposed to opposing side surfaces of therectangular molding member 60, and the terminal member 90 is exposed toa side surfaces connecting the opposing side surfaces. In such anapproach, it is easy to ensure a necessary creepage distance between theterminal member 90 and each of the main current terminal 70 and thecontrol terminal 80. Thus, the semiconductor package 100 can be reducedin size.

A method of manufacturing the semiconductor device according to thefirst embodiment is described below. Firstly, the semiconductor element10 is soldered to the mounting surface of the first metal member 20.Then, as needed, the semiconductor element 10 and the control terminal80 are wire-bonded together. Then, the heat sink 50 is soldered on thesemiconductor element 10, and the second metal member 30 is soldered onthe heat sink 50.

Then, the molding member 60 is formed by a transfer molding process or apotting process so that a clearance between the first and second metalmembers 20, 30 and side surfaces of the first and second metal members20, 30 can be covered with the molding member 60. Thus, thesemiconductor element 10 and the first and second metal members 20, 30are encapsulated in the molding member 60 so that the semiconductorpackage 100 can be completed. Then, the semiconductor package 100 isjoined to the cooler 200 through the grease 300. Thus, the semiconductordevice can be completed.

As described above, according to the first embodiment, the conductinglayers 23, 33 of the first and second metal members 20, 30 areelectrically connected to the cooler 200 though the terminal member 90.In such an approach, it is ensured that the conductive layers 23, 33 areat the same potential as the cooler 200.

For example, each of the first and second metal members 20, 30 can beconnected to the cooler 200 by one terminal member 90. Alternatively,each of the first and second metal members 20, 30 can be connected tothe cooler 200 by two or more terminal members 90. In such an approach,reliability of electrical connection between the cooler 200 and each ofthe first and second metal members 20, 30 can be improved.

In the first embodiment, the semiconductor device is configured as a“double-sided radiation semiconductor device”, in which the first andsecond metal members 20, 30 are provided on the back and front surfacesof the semiconductor element 10, respectively, so that heat of thesemiconductor element 10 can be radiated from both surfaces of thesemiconductor element 10. Alternatively, the semiconductor device can beconfigured as a “single-sided radiation semiconductor device”, in whichone of the first and second metal members 20, 30 is provided on thesemiconductor element 10 so that heat of the semiconductor element 10can be radiated from only one surface of the semiconductor element 10.

Second Embodiment

A semiconductor device according to a second embodiment of the presentinvention is described below with reference to FIGS. 3A and 3B. FIG. 3Ais a cross-sectional view of the semiconductor device. FIG. 3B is anenlarged view of a circle IIIB in FIG. 3A. A difference of the secondembodiment from the first embodiment is as follows.

In the first embodiment, the first and second metal members 20, 30 areprovided on the back and front surfaces of the semiconductor element 10,respectively, so that heat of the semiconductor element 10 can bereleased from both surfaces of the semiconductor element 10. Incontrast, in the second embodiment, as shown in FIG. 3A, although thefirst metal member 20 is provided on the back surface of thesemiconductor element 10, there is no metal member on the front surfaceof the semiconductor element 10. That is, according to the secondembodiment, the semiconductor device is configured as a single-sidedradiation semiconductor device, and heat of the semiconductor element 10is released from only the back surface of the semiconductor element 10.

Specifically, the second embodiment is different from the firstembodiment in that the solder 40, the heat sink 50, the second metalmember 30, and the cooler 200 on the front surface of the semiconductorelement 10 are omitted and that the front surface of the semiconductorelement 10 is covered with the molding member 60.

As shown in FIG. 3B, the conducting layer 23, serving as the radiationsurface of the semiconductor package 100, is in contact with the cooler200 through the electrically insulating grease 300. Specifically, theconducting layer 23 is in contact with the outer surface of the coolantpassage 201 of the cooler 200 through the grease 300.

Like the first embodiment, the conducting layer 23 and the cooler 200are electrically connected together so that the first metal member 20can have the same potential structure. In the first embodiment, the samepotential structure is formed by the terminal member 90. In contrast, asshown in FIG. 3B, in the second embodiment, the same potential structureis formed by a projection 203 from the cooler 200.

In an example shown in FIG. 3B, the projection 203 projects from theouter surface of the coolant passage 201 of the cooler 200 toward theconducting layer 23 that is located facing the coolant passage 201. Forexample, the projection 203 can be formed by a pressing (i.e., stamping)process. The projection 203 is not limited to a particular shape. Forexample, the projection 203 can have a conical shape or a pyramidalshape.

The projection 203 extends from the cooler 200 to the conducting layer23 by penetrating the grease 300 and is in direct contact with theconducting layer 23. Thus, the cooler 200 is electrically connected tothe conducting layer 23 at the projection 203 so that the conductinglayer 23 and the cooler 200 can be at the same potential.

For example, when the semiconductor package 100 is mounted on the cooler200 through the grease 300 during manufacturing processes, load isapplied to the semiconductor package 100 so that the semiconductorpackage 100 can be pressed against the cooler 200. Thus, the projection203 pushes the grease 300 aside so that a tip of the projection 203 canbe in direct contact with the conducting layer 23.

In the example shown in FIG. 3B, the cooler 200 has the projection 203.Alternatively, the conducting layer 23 can have the projection 203. Forexample, the projection 203 can be formed in the conducting layer 23 bypressing the metal portion 21 toward the conducting layer 23. In thiscase, a tip of the projection 203 of the conducting layer 23 is indirect contact with the cooler 200 by penetrating the grease 300.

That is, the projection 203 is formed in one of the cooler 200 and theconducting layer 23 and extends to the other of the cooler 200 and theconducting layer 23 by penetrating the grease 300. Thus, the cooler 200and the conducting layer 23 can be electrically connected togetherthrough the projection 203 that penetrates the grease 300. It is notedthat the projection 203 and the cooler 200 or the conducting layer 23are a single piece. In other words, the projection 203 is part of thecooler 200 or the conducting layer 23.

As described above, according to the second embodiment, the conductinglayer 23 and the cooler 200 are electrically connected together throughthe projection 203. Thus, it is ensured that the conducting layer 23 andthe cooler 200 are at the same potential.

Further, according to the second embodiment, as shown in FIG. 3B, thesemiconductor device has the terminal member 90. Like the firstembodiment, the first end of the terminal member 90 is located insidethe molding member 60 and electrically connected to the conducting layer23, and the second end of the terminal member 90 is exposed outside themolding member 60. Unlike the first embodiment, the second end of theterminal member 90 is not connected to the cooler 200.

The terminal member 90 can be used to check whether the conducting layer23 and the cooler 200 are electrically connected together through theprojection 203. For example, the electrical connection between theconducting layer 23 and the projection 203 can be checked by checkingelectrical connection between the second end of the terminal member 90and the cooler 200 outside the molding member 60.

Modifications of the second embodiment are described below withreference to FIGS. 4 and 5. FIG. 4 shows a first modification of thesecond embodiment, and FIG. 5 shows a second modification of the secondembodiment.

According to the first modification of the second embodiment, as shownin FIG. 4, the projection 203 has a shape like a blade of a grater. Sucha grater blade shape can be formed by cutting a hollow hemisphericaldome shape in halves. When the projection 203 has such a grater bladeshape, the projection 203 can have a recess 203 a between its tip andits base.

For example, when the semiconductor package 100 is mounted on the cooler200 through the grease 300 during manufacturing processes, thesemiconductor package 100 is pressed against the cooler 200 by slidingthe semiconductor package 100 over the cooler 200 so that thesemiconductor package 100 can move in a reciprocating motion.

In such an approach, the grease 300 remaining at the tip of the grease300 enters and is accommodated in the recess 203 a of the projection203, as indicated by an arrow in FIG. 4. Thus, it is ensured that theprojection 203 is in direct contact with the conducting layer 23.

According to the second modification of the second embodiment, as shownin FIG. 5, the projection 203 has an umbrella shape. When the projection203 has such an umbrella shape, the projection 203 can have the recess203 a inside.

Therefore, when the semiconductor package 100 is mounted on the cooler200 through the grease 300 during manufacturing processes, the grease300 enters and is accommodated in the recess 203 a of the projection203. Thus, it is ensured that the projection 203 is in direct contactwith the conducting layer 23.

In the second embodiment including the modifications, the cooler 200 hasone projection 203 in contact with the conducting layer 23.Alternatively, the cooler 200 can have two or more projections 203 incontact with the conducting layer 23. In such an approach, reliabilityof the electrical connection between the cooler 200 and the conductinglayer 23 can be improved.

When the semiconductor package 100 is mounted on the cooler 200 throughthe grease 300 during manufacturing processes, a large current can besupplied to the conducting layer 23 and the cooler 200 so that theprojection 203 can be welded to the conducting layer 23.

In such an approach, it is ensured that the projection 203 and theconducting layer 23 are electrically connected together.

Further, in the second embodiment including the modifications, theprojection 203 is applied to a single-sided semiconductor device.Alternatively, the projection 203 can be applied to a double-sidedsemiconductor device of the first embodiment. In this case, the secondend of the terminal member 90 can be disconnected from the cooler 200.

When the projection 203 is applied to a double-sided semiconductordevice, the projection 203 can be provided in the cooler 200 or theconducting layers 23, 33.

Third Embodiment

A semiconductor device according to a third embodiment of the presentinvention is described below with reference to FIG. 6. FIG. 6 is apartial cross-sectional view of the semiconductor device. A differenceof the third embodiment from the first embodiment is as follows.

FIG. 6 illustrates the same potential structure of only the first metalmember 20. It is noted that the same potential structure of the secondmetal member 30 is formed in the same manner as the same potentialstructure of the first metal member 20, as indicated by numbers inparentheses in FIG. 6.

As shown in FIG. 6, the conducting layer 23, serving as the radiationsurface of the semiconductor package 100, is in contact with the cooler200 through the electrically insulating grease 300. In an example shownin FIG. 6, the conducting layer 23 is in contact with the outer surfaceof the coolant passage 201 of the cooler 200 through the grease 300.

In the first embodiment, the conducting layer 23 is flush with an outersurface of the molding member 60 located facing the cooler 200. Incontrast, in the third embodiment, the conducting layer 23 projects fromthe outer surface of the molding member 60 toward the cooler 200. Inother words, the radiation surface of the semiconductor package 100projects from the outer surface of the molding member 60.

The projecting radiation surface of the semiconductor package 100 ispressed against the cooler 200 through the grease 300 so that theconducting layer 23 and the cooler 200 can be electrically connectedtogether to form the same potential structure.

That is, the projecting radiation surface of the semiconductor package100 pushes the grease 300 aside and is in direct contact with the cooler200.

Specifically, when the projecting radiation surface of the semiconductorpackage 100 is pressed against the cooler 200, the outer surface of thecooler 200 is slightly recessed. In this case, an edge of the projectingradiation surface of the semiconductor package 100 is in direct contactwith the recessed outer surface of the cooler 200 so that the conductinglayer 23 and the cooler 200 can be electrically connected together.

As described above, according to the third embodiment, the conductinglayer 23 of the first metal member 20 projects from the outer surface ofthe molding member 60 and is in direct contact with the cooler 200.Thus, it is ensured that the conducting layer 23 and the cooler 200 areat the same potential. As mentioned previously, the conducting layer 23of the second metal member 30 projects from the outer surface of themolding member 60 and is in direct contact with the cooler 200.

In an example shown in FIG. 6, a tip of the projecting conducting layer23 has a flat surface with a rectangular shape, for example, and an edgeof the flat surface is in direct contact with the cooler 200. It isnoted that the tip of the projecting conducting layer 23 is not limitedto the flat surface.

Although not shown in the drawings, according to the third embodiment,the semiconductor device can include the terminal member 90 having thefirst end connected to the conducting layer 23 inside the molding member60 and the second end exposed outside the molding member 60.

In such an approach, the electrical connection between the conductinglayer 23 and the projection 203 can be checked by using the terminalmember 90.

The third embodiment can be applied to both a double-sided semiconductordevice and a single-sided semiconductor device.

Fourth Embodiment

A semiconductor device according to a fourth embodiment of the presentinvention is described below with reference to FIG. 7. FIG. 7 is apartial cross-sectional view of the semiconductor device.

Like the second embodiment, according to the fourth embodiment, thecooler 200 has the projection 203 for forming the same potentialstructure. A difference of the fourth embodiment from the secondembodiment is that the projection 203 is located where there is nogrease 300.

As shown in FIG. 7, the conducting layer 23 is in contact with the outersurface of cooler 200 through the grease 300.

According to the fourth embodiment, the conducting layer 23 is partiallycovered with the molding member 60. An uncovered portion of theconducting layer 23 serves as the radiation surface. A through hole 61is formed in the molding member 60 so that the covered portion of theconducting layer 23 can be exposed in the through hole 61. The throughhole 61 can be formed by forming a projection, corresponding to thethrough hole 61, in a mold for the molding member 60.

The projection 203 extends from the outer surface of the coolant passage201 toward the conducting layer 23. The projection 203 is located facingthe through hole 61.

The projection 203 enters the through hole 61 and is in direct contactwith the conducting layer 23 in the through hole 61. Thus, theconducting layer 23 and the cooler 200 are electrically connectedtogether and at the same potential. The projection 203 is not limited toa shape shown in FIG. 7. For example, the projection 203 can have theshapes shown in FIGS. 3B, 4, and 5. The through hole 61 is not limitedto a particular shape. For example, the through hole 61 can have acircular shape or a rectangular shape.

As described above, according to the fourth embodiment, the cooler 203has the projection 203 at a position where there is no grease 300, andthe conducting layer 23 and the cooler 200 are electrically connectedtogether through the projection 203. In such an approach, the thicknessof the grease 300 between the radiation surface (i.e., uncovered portionof the conducting layer 23) and the cooler 200 can be reduced regardlessof the height of the projection 203. Thus, a reduction in radiationperformance can be prevented as much as possible.

For example, in the second embodiment shown in FIG. 3B, the thickness ofthe grease 300 depends on the height of the projection 203. Therefore,when the height of the projection 203 is large, the radiationperformance may be reduced due to a large thickness of the grease 300.In contrast, in the fourth embodiment, since the thickness of the grease300 can be reduced regardless of the height of the projection 203, thereduction in the radiation performance can be prevented as much aspossible.

In this way, the conducting layer 23 and the cooler 200 are electricallyconnected together through the projection 203. Thus, it is ensured thatthe conducting layer 23 and the cooler 200 are at the same potential.

Although not shown in the drawings, according to the fourth embodiment,the semiconductor device can include the terminal member 90 having thefirst end connected to the conducting layer 23 inside the molding member60 and the second end exposed outside the molding member 60. In such anapproach, the electrical connection between the conducting layer 23 andthe cooler 200 through the projection 203 can be checked by using theterminal member 90.

In an example shown in FIG. 7, the cooler 200 has one projection 203 incontact with the conducting layer 23 in the through hole 61.Alternatively, the cooler 200 can have two or more projections 203 incontact with the conducting layer 23 in the through hole 61. In such anapproach, reliability of the electrical connection between the cooler200 and the conducting layer 23 can be improved.

The fourth embodiment can be applied to both a double-sidedsemiconductor device and a single-sided semiconductor device.

Fifth Embodiment

A semiconductor device according to a fifth embodiment of the presentinvention is described below with reference to FIG. 8. FIG. 8 is apartial cross-sectional view of the semiconductor device.

The fifth embodiment is similar to the first embodiment. As can be seenby comparing FIG. 1B and FIG. 8, a difference of the fifth embodimentfrom the first embodiment is in that the terminal member 90 is notconnected to the cooler 200 and that the electrically insulating grease300 is replaced with an electrically conducting grease 310. Theconducting layer 23 and the cooler 200 are electrically connectedtogether through the grease 310 to form the same potential structure inwhich the conducting layer 23 and the cooler 200 are at the samepotential.

FIG. 8 illustrates the same potential structure of only the first metalmember 20. It is noted that the same potential structure of the secondmetal member 30 is formed in the same manner as the same potentialstructure of the first metal member 20, as indicated by numbers inparentheses in FIG. 8.

As shown in FIG. 8, the conducting layer 23 as the radiation surface ofthe semiconductor package 100 is in contact with the outer surface ofthe cooler 200 through the grease 310. Thus, the conducting layer 23 andthe cooler 200 are electrically connected together through the grease310. For example, the grease 310 can be resin containing conductivefiller such as copper or silver.

As described above, according to the fifth embodiment, the conductinglayer 23 of the metal member 20 and the cooler 200 are electricallyconnected together through the grease 310. Thus, it is ensured that theconducting layer 23 and the cooler 200 are at the same potential.

Further, as shown in FIG. 8, the semiconductor device includes theterminal member 90 having the first end connected to the conductinglayer 23 inside the molding member 60 and the second end exposed outsidethe molding member 60. In such an approach, the electrical connectionbetween the conducting layer 23 and the cooler 200 through the grease310 can be checked by using the terminal member 90. The terminal member90 can be omitted.

Although not shown in the drawings, the electrically conducting grease310 can be located in the center of a contact surface between theconducting layer 23 and the cooler 200, and the electrically insulatinggrease 300 can be located on the periphery of the contact surface tosurround the electrically conducting grease 310. In such an approach, itis possible to prevent the electrically conducting grease 310 fromspreading out of the semiconductor package 100. Thus, a short-circuitbetween the semiconductor package 100 and another device locatedadjacent to the semiconductor package 100 can be prevented.

The fifth embodiment can be applied to both a double-sided semiconductordevice and a single-sided semiconductor device.

Sixth Embodiment

A semiconductor device according to a sixth embodiment of the presentinvention is described below with reference to FIGS. 9A-9C. FIG. 9A is aperspective view of the semiconductor device. FIG. 9B is across-sectional view taken along the line IXB-IXB in FIG. 9A. FIG. 9C isan enlarged view of a circle IXC in FIG. 9B.

According to the sixth embodiment, the semiconductor device includes awall portion 62 for defining the coolant passage 201 where the coolant202 circulates. The wall portion 62 can be made of the same material asthe molding member 60.

As shown in FIGS. 9A-9C, the molding member 60 covers the semiconductorelement 10 and the metal members 20, 30 to form the semiconductorpackage 100. The wall portion 62 has a ring shape and located around themolding member 60 to surround the radiation surface of the semiconductorpackage 100. The molding member 60 and the wall portion 62 are spacedfrom each other to form a through hole as the coolant passage 201.

The molding member 60 and the wall portion 62 can be formed by a moldingprocess. The molding member 60 and the wall portion 62 can be a singlepiece of resin. Alternatively, the molding member 60 and the wallportion 62 can be separate ingle pieces of resin. In this case, themolding member 60 and the wall portion 62 can be joined together by anadhesive process, a secondary molding process, or the like.

As shown in FIG. 9C, when the coolant 202 circulates through the coolantpassage 201, the coolant 202 is in direct contact with the conductinglayers 23, 33 as the radiation surfaces of the semiconductor package 100so that the radiation surfaces can be cooled.

FIG. 9C illustrates the same potential structure of only the secondmetal member 30. It is noted that the same potential structure of thefirst metal member 20 is formed in the same manner as the same potentialstructure of the second metal member 30, as indicated by numbers inparentheses in FIG. 9C.

According to the sixth embodiment, the coolant 202 has an electricalconductivity. Thus, the conducting layers 23, 33 of the metal members20, 30 are electrically connected to the cooler 200 through the coolant202. The coolant 202 can be water. However, water is decomposed by anelectric current. Therefore, it is preferable that the coolant 202 beliquid sodium, mercury, or the like.

As described above, according to the sixth embodiment, the conductinglayers 23, 33 of the metal members 20, 30 are electrically connected tothe cooler 200 through the coolant 202. Thus, it is ensured that theconducting layers 23, 33 can be at the same potential as the cooler 200.

Further, as shown in FIGS. 9A-9C, the semiconductor device includes theterminal member 90 having the first end connected to the conductinglayers 23, 33 inside the molding member 60 and the second end exposedoutside the molding member 60.

In such an approach, the electrical connection between the cooler 200and the conducting layers 23, 33 through the coolant 202 can be checkedby using the terminal member 90.

The sixth embodiment can be applied to both a double-sided semiconductordevice and a single-sided semiconductor device.

Seventh Embodiment

A semiconductor device according to a seventh embodiment of the presentinvention is described below with reference to FIGS. 10A and 10B. FIG.10A is an exploded view of the semiconductor device. FIG. 10B is anassembled view of the semiconductor device.

As shown in FIG. 10B, the electrically insulating grease 300 and theelectrically conducting grease 310 are located between the conductinglayer 23 (i.e., radiation surface of the semiconductor package 100) andthe cooler 200 in such a manner that the grease 310 is entirely surroundby the grease 300.

The conducting layer 23 is in contact with the cooler 200 through boththe grease 300 and the grease 310 and electrically connected to thecooler 200 through only the grease 310.

For example, the semiconductor package 100 and the cooler 200 can beassembled into the semiconductor device as follows. Firstly, as shown inFIG. 10A, the electrically insulating grease 300 is placed on the entiresurface of the conducting layer 23. Then, the electrically conductinggrease 310 is placed on the grease 300 in the center of the conductinglayer 23. Then, as indicated by an arrow in FIG. 10A, the semiconductorpackage 100 is placed on the cooler 200 through the greases 300, 310 andpressed against the cooler 200. Thus, as shown in FIG. 10B, thesemiconductor package 100 and the cooler 200 are assembled into thesemiconductor device.

As described above, according to the seventh embodiment, the greases300, 310 are located between the conducting layer 23 and the cooler 200in such a manner that the electrically conducting grease 310 is entirelysurround by the electrically insulating grease 300. In such an approach,it is possible to prevent the electrically conducting grease 310 fromspreading out of the semiconductor package 100. Thus, a short-circuitbetween the semiconductor package 100 and another device locatedadjacent to the semiconductor package 100 can be prevented. As shown inFIG. 10B, there is possibility that the grease 300 from spreading out ofthe semiconductor package 100. However, the spread of the grease 300does not cause a problem such as a short-circuit, because the grease 300has an electrically insulating property.

First Modification of the Seventh Embodiment

FIGS. 11A and 11B illustrate a semiconductor device according to a firstmodification of the seventh embodiment. FIG. 11A is an exploded view ofthe semiconductor device. FIG. 11B is an assembled view of thesemiconductor device.

According to the first modification, the greases 300, 310 are locatedbetween the conducting layer 23 and the cooler 200 in such a manner thatthe electrically conducting grease 310 is entirely surround by theelectrically insulating grease 300. The conducting layer 23 is incontact with the cooler 200 through both the grease 300 and the grease310 and electrically connected to the cooler 200 through only the grease310.

Since the electrically conducting grease 310 is entirely surround by theelectrically insulating grease 300, it is possible to prevent theelectrically conducting grease 310 from spreading out of thesemiconductor package 100. Thus, a short-circuit between thesemiconductor package 100 and another device located adjacent to thesemiconductor package 100 can be prevented.

Further, according to the first modification, the semiconductor package100 has a groove 400 around the grease 310 to prevent the grease 310from spreading over the groove 400. Specifically, the groove 400 has aring shape, surrounding the grease 310, and is formed in the moldingmember 60 by a molding process or the like.

When the semiconductor package 100 and the cooler 200 are assembled intothe semiconductor device by pressing the semiconductor package 100against the cooler 200 through the greases 300, 310, the electricallyconducting grease 310 spreads and enters the groove 400. Thus, thegroove 400 prevents the electrically conducting grease 310 fromspreading out of the semiconductor package 100.

Thus, the conducting layer 23 and the cooler 200 can be electricallyconnected together through the electrically conducting grease 310 whilepreventing the grease 310 from causing a problem such as a short-circuitbetween the semiconductor package 100 and another device locatedadjacent to the semiconductor package 100.

Preferably, the groove 400 can have a continuous ring shape surroundingthe entire periphery of the grease 310. Alternatively, the groove 400can have a discontinuous ring shape having multiple groove portionsarranged in a ring shape. In this case, for example, there is no grooveportion at a position where a distance between an edge of the grease 310and an edge of the semiconductor package 100 is large enough to preventthe grease 310 from spreading out of the semiconductor package 100.

Second Modification of the Seventh Embodiment

FIGS. 12A and 12B illustrate a semiconductor device according to asecond modification of the seventh embodiment. FIG. 12A is an explodedview of the semiconductor device. FIG. 12B is an assembled view of thesemiconductor device. According to the second modification, the cooler200 has the groove 400 around the grease 310 to prevent the grease 310from spreading over the groove 400.

Specifically, the groove 400 has a ring shape, surrounding the grease310, and is formed in the cooler 200 by a pressing (i.e., stamping)process or the like. When the semiconductor package 100 and the cooler200 are assembled into the semiconductor device by pressing thesemiconductor package 100 against the cooler 200 through the greases300, 310, the electrically conducting grease 310 spreads and enters thegroove 400. Thus, the groove 400 prevents the electrically conductinggrease 310 from spreading out of the semiconductor package 100.

Third Modification of the Seventh Embodiment

FIGS. 13A and 13B illustrate a semiconductor device according to a thirdmodification of the seventh embodiment. FIG. 13A is an exploded view ofthe semiconductor device. FIG. 13B is an assembled view of thesemiconductor device. According to the third modification, theelectrically insulating grease 300 is not used. That is, the conductinglayer 23 is in contact with and electrically connected to the cooler 200through only the electrically conducting grease 310.

Further, according to the third modification, the semiconductor package100 has the groove 400 around the grease 310 to prevent the grease 310from spreading over the groove 400. Thus, the groove 400 prevents theelectrically conducting grease 310 from spreading out of thesemiconductor package 100. In summary, the third modification of theseventh embodiment corresponds to a combination of the fifth embodimentand the first modification of the seventh embodiment.

Fourth Modification of the Seventh Embodiment

FIGS. 14A and 14B illustrate a semiconductor device according to afourth modification of the seventh embodiment. FIG. 14A is an explodedview of the semiconductor device. FIG. 14B is an assembled view of thesemiconductor device. According to the fourth modification, theelectrically insulating grease 300 is not used. That is, the conductinglayer 23 is in contact with and electrically connected to the cooler 200through only the electrically conducting grease 310.

Further, according to the fourth modification, the cooler 200 has thegroove 400 around the grease 310 to prevent the grease 310 fromspreading over the groove 400. Thus, the groove 400 prevents theelectrically conducting grease 310 from spreading out of thesemiconductor package 100. In summary, the fourth modification of theseventh embodiment corresponds to a combination of the fifth embodimentand the second modification of the seventh embodiment.

The groove 400 can be formed in both the semiconductor package 100 andthe cooler 200.

The groove 400 can be formed in any of the semiconductor devices of thepreceding embodiments.

The seventh embodiment can be applied to both a double-sidedsemiconductor device and a single-sided semiconductor device.

(Modifications)

The embodiments described above can be modified in various ways, forexample, as follows.

The conducting layers 23, 33 can be made of the same material as aportion of the cooler 200 in contact with the conducting layers 23, 33.In such an approach, electric corrosion between the cooler 200 and theconducting layers 23, 33 can be reduced or prevented. For example, theconducting layers 23, 33 and the cooler 200 can be made of aluminum orcopper.

In the first embodiment, the control terminal 80 and the terminal member90 are exposed to different side surfaces of the molding member 60.Alternatively, as shown in FIG. 9A, the control terminal 80 and theterminal member 90 can be exposed to the same side surface of themolding member 60.

In such an approach, the control terminal 80 and the terminal member 90can be connected to external circuitry, such as a control circuit, atthe same time. In this case, the terminal member 90 and the cooler 200can be electrically connected together by connecting a wire of theexternal circuitry to the components, such as a pump, of the cooler 200.

In the embodiments, the greases 300, 310 are used as a viscous memberfor filling the clearance between the radiation surface of thesemiconductor package 100 and the cooler 200. Alternatively, othermaterials, such as electrically insulating or conducting adhesive orpaste can be used as the viscous member.

Such changes and modifications are to be understood as being within thescope of the present invention as defined by the appended claims.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor package including a semiconductor element, a metal member,and a molding member for encapsulating the semiconductor element and themetal member therein, the metal member having a metal portion thermallyconnected to the semiconductor element, an electrically insulating layeron the metal portion, and an electrically conducting layer on theinsulating layer, the conducting layer being at least partially exposedoutside the molding member and serving as a radiation surface forradiating heat of the semiconductor element; a cooler having a coolantpassage through which a coolant circulates, the conducting layer and thecooler being electrically connected together, and the cooler beingconfigured to cool the conducting layer and absorb the heat from theradiating surface of the semiconductor element by circulating thecoolant within the cooler; a viscous member having a viscosity and bothheat conducting and electrical insulating properties filling a clearancebetween the radiation surface of the semiconductor package and thecooler, and the viscous member contacting both the radiation surface andthe cooler and conducting heat exchange between the radiation surfaceand the cooler; and a terminal member having a first end located insidethe molding member and electrically connected to the conducting layerand a second end located outside the molding member and electricallyconnected to the cooler, the conducting layer and the cooler beingelectrically connected together through the terminal member.
 2. Thesemiconductor device according to claim 1, wherein the terminal memberextends from a surface of the conducting layer that is different fromthe radiation surface.
 3. The semiconductor device according to claim 2,wherein the conducting layer has a front surface serving as theradiation surface, a back surface opposite to the front surface, and aside surface between the front and back surfaces, and the terminalmember extends from the side surface of the conducting layer.
 4. Thesemiconductor device according to claim 1, wherein the conducting layerhas a front surface serving as the radiation surface, a back surfaceopposite to the front surface, and a side surface between the front andback surfaces, and the terminal member extends from the side surface ofthe conducting layer.